Two-dimensional electron gases at oxide interfaces

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Mannhart, J. and Blank, D.H.A. and Hwang, H.Y. and Millis, A.J. and Triscone, J.-M. (2008) Two-dimensional electron gases at oxide interfaces. MRS bulletin, 33 . pp. 1027-1034. ISSN 0883-7694

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Abstract:Two-dimensional electron gases (2DEGs) based on conventional semiconductors
such as Si or GaAs have played a pivotal role in fundamental science and
technology. The high mobilities achieved in 2DEGs enabled the discovery of the
integer and fractional quantum Hall effects and are exploited in high-electron-mobility
transistors. Recent work has shown that 2DEGs can also exist at oxide interfaces.
These electron gases typically result from reconstruction of the complex electronic
structure of the oxides, so that the electronic behavior of the interfaces can differ from
the behavior of the bulk. Reports on magnetism and superconductivity in oxide
2DEGs illustrate their capability to encompass phenomena not shown by interfaces
in conventional semiconductors. This article reviews the status and prospects of
oxide 2DEGs
Item Type:Article
Faculty:
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/75808
Official URL:http://www.jst.go.jp/sicp/ws2009_ge3rd/presentation/14.pdf
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