Two-dimensional electron gases at oxide interfaces

Mannhart, J. and Blank, D.H.A. and Hwang, H.Y. and Millis, A.J. and Triscone, J.-M. (2008) Two-dimensional electron gases at oxide interfaces. MRS bulletin, 33 . pp. 1027-1034. ISSN 0883-7694

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Abstract:	Two-dimensional electron gases (2DEGs) based on conventional semiconductors such as Si or GaAs have played a pivotal role in fundamental science and technology. The high mobilities achieved in 2DEGs enabled the discovery of the integer and fractional quantum Hall effects and are exploited in high-electron-mobility transistors. Recent work has shown that 2DEGs can also exist at oxide interfaces. These electron gases typically result from reconstruction of the complex electronic structure of the oxides, so that the electronic behavior of the interfaces can differ from the behavior of the bulk. Reports on magnetism and superconductivity in oxide 2DEGs illustrate their capability to encompass phenomena not shown by interfaces in conventional semiconductors. This article reviews the status and prospects of oxide 2DEGs
Item Type:	Article
Faculty:	Science and Technology (TNW)
Research Group:	Inorganic Materials Science (IMS)
Link to this item:	http://purl.utwente.nl/publications/75808
Official URL:	http://www.jst.go.jp/sicp/ws2009_ge3rd/presentation/14.pdf
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