A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks

Sebastiano, Fabio and Breems, Lucien and Makinwa, Kofi and Drago, Salvatore and Leenaerts, Domine and Nauta, Bram (2010) A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks. In: European Solid-State Circuits Conference, ESSCIRC 2010 , 14-16 Sept 2010, Seville, Spain.

Preview

PDF
259Kb

Abstract:	For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.
Item Type:	Conference or Workshop Item
Copyright:	© 2010 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/75698
Official URL:	http://dx.doi.org/10.1109/ESSCIRC.2010.5619792
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page