A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks
Sebastiano, Fabio and Breems, Lucien and Makinwa, Kofi and Drago, Salvatore and Leenaerts, Domine and Nauta, Bram (2010) A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks. In: European Solid-State Circuits Conference, ESSCIRC 2010, 14-16 September 2010, Seville, Spain (pp. pp. 102-105).
|Abstract:||For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.
|Item Type:||Conference or Workshop Item|
|Copyright:||© 2010 IEEE|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/75698|
|Export this item as:||BibTeX|
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