A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks


Share/Save/Bookmark

Sebastiano, Fabio and Breems, Lucien and Makinwa, Kofi and Drago, Salvatore and Leenaerts, Domine and Nauta, Bram (2010) A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency reference for wireless sensor networks. In: European Solid-State Circuits Conference, ESSCIRC 2010, 14-16 September 2010, Seville, Spain (pp. pp. 102-105).

[img]
Preview
PDF
265kB
Abstract:For the first time, a temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125 °C, its frequency spread is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.

Item Type:Conference or Workshop Item
Copyright:© 2010 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/75698
Official URL:http://dx.doi.org/10.1109/ESSCIRC.2010.5619792
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page