On the modelling and optimisation of a novel Schottky based silicon rectifier


Hemert, T. van and Hueting, R.J.E. and Rajasekharan, B. and Salm, C. and Schmitz, J. (2010) On the modelling and optimisation of a novel Schottky based silicon rectifier. In: 40th European Solid-State Device Research, Essderc 2010, 13-17 Sep 2010, Sevilla, Spain (pp. pp. 460-463).

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Abstract:The charge plasma (CP) diode is a novel silicon rectifier using Schottky barriers, to circumvent the requirement for doping and related problems when small device dimensions are used. We present a model for the DC current voltage characteristics and verify this using device simulations. The model revealed an exponential dependence of the current on the metal work functions. And approximate linear dependence on the device geometry. The model is used to optimize the device performance. We show a factor 30 improvement in on/off current ratio (and hence rectification) toward 10E7 by appropriate sizing of the lateral device dimensions at given specific metal work functions.
Item Type:Conference or Workshop Item
Copyright:© 2010 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/75631
Official URL:http://dx.doi.org/10.1109/ESSDERC.2010.5618177
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