A new model for the backscatter coefficient in nanoscale MOSFETs


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Steen, J.-L.P.J. van der and Palestri, P. and Esseni, D. and Hueting, R.J.E. (2010) A new model for the backscatter coefficient in nanoscale MOSFETs. In: 40th European Solid-State Device Research, Essderc 2010, 13-17 Sep 2010, Sevilla, Spain (pp. pp. 234-237).

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Abstract:In this work, we present a new model for the backscatter coefficient in nanoscale MOSFETs. The model assumes that only few backscattering events occur, which is likely to hold for devices with channel length in the order of the carrier mean free path. Both elastic and inelastic scattering mechanisms are accounted for. Moreover, the model naturally captures the effect of degeneracy. The model is compared with Monte–Carlo simulations for a broad range of channel lengths, temperatures, and electric fields, obtaining in general a very good agreement.
Item Type:Conference or Workshop Item
Copyright:© 2010 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/75630
Official URL:http://dx.doi.org/10.1109/ESSDERC.2010.5618380
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