Magnetic Tunnel Junctions With Co:TiO2 Magnetic Semiconductor Electrodes

Lee, Y.J. and Kumar, A. and Vera Marún, I.J. and Jong de, M.P. and Jansen, R. (2010) Magnetic Tunnel Junctions With Co:TiO2 Magnetic Semiconductor Electrodes. IEEE Transactions on Magnetics, 46 (6). pp. 1683-1686. ISSN 0018-9464

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Abstract:	Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO2, while the junction resistance increases strongly. This suggests that the ultrathin Co:TiO2 is a paramagnetic insulator that acts as an additional tunnel barrier, in contrast to thick (180 nm) layers grown under comparable conditions, which exhibit metallic impurity band conduction and room-temperature ferromagnetism.
Item Type:	Article
Copyright:	© 2010 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Nano-Electronics (NE)
Link to this item:	http://purl.utwente.nl/publications/75549
Official URL:	http://dx.doi.org/10.1109/TMAG.2010.2046019
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