Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

Naber, W.J.M. and Craciun, M.F. and Lemmens, J.H.J. and Arkenbout, A.H. and Palstra, T.T.M. and Morpurgo, A.F. and Wiel van der, W.G. (2011) Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors. Organic Electronics, 11 (5). pp. 743-747. ISSN 1566-1199

PDF
Restricted to UT campus only: Request a copy
283Kb

Abstract:	We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.
Item Type:	Article
Copyright:	© 2010 Elsevier
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Nano-Electronics (NE)
Link to this item:	http://purl.utwente.nl/publications/75540
Official URL:	http://dx.doi.org/10.1016/j.orgel.2010.01.013
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page