Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

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Naber, W.J.M. and Craciun, M.F. and Lemmens, J.H.J. and Arkenbout, A.H. and Palstra, T.T.M. and Morpurgo, A.F. and Wiel, W.G. van der (2011) Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors. Organic Electronics, 11 (5). pp. 743-747. ISSN 1566-1199

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Abstract:We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics.
Item Type:Article
Copyright:© 2010 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/75540
Official URL:http://dx.doi.org/10.1016/j.orgel.2010.01.013
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