Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

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Agazzi, Laura and Bradley, Jonathan D.B. and Dijkstra, Meindert and Ay, Feridun and Roelkens, Gunther and Baets, Roel and Wörhoff, Kerstin and Pollnau, Markus (2010) Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides. Optics Express, 18 (26). pp. 27703-27711. ISSN 1094-4087

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Abstract:Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.
Item Type:Article
Additional information:Open access article
Copyright:© 2010 Optical Society of America
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/75299
Official URL:http://dx.doi.org/10.1364/OE.18.027703
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