Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides


Agazzi, Laura and Bradley, Jonathan D.B. and Dijkstra, Meindert and Ay, Feridun and Roelkens, Gunther and Baets, Roel and Wörhoff, Kerstin and Pollnau, Markus (2010) Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides. Optics Express, 18 (26). pp. 27703-27711. ISSN 1094-4087

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Abstract:Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.
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Copyright:© 2010 Optical Society of America
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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