A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

Share/Save/Bookmark

Sebastiano, Fabio and Breems, Lucien J. and Makinwa, Kofi A.A. and Drago, Salvatore and Leenaerts, Domine M.W. and Nauta, Bram (2010) A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C. IEEE Journal of Solid-State Circuits, 45 (12). 2591 -2601. ISSN 0018-9200

open access
[img]
Preview
PDF
676kB
Abstract:An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2.
Item Type:Article
Copyright:© 2010 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/75260
Official URL:http://dx.doi.org/10.1109/JSSC.2010.2076610
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 275785