Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm

Dalfsen van, K. and Yang, J. and Ay, F. and Wörhoff, K. and Pollnau, M. (2010) Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm. In: 15th European Conference on Integrated Optics, ECIO 2010, 7-9 April 2010, Cambridge, United Kingdom.

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Abstract:	Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated, yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+ concentrations were deduced.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/75258
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