Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm
Dalfsen, K. van and Yang, J. and Ay, F. and Wörhoff, K. and Pollnau, M. (2010) Nd-doped aluminum oxide integrated amplifiers at 880 nm, 1060 nm, and 1330 nm. In: 15th European Conference on Integrated Optics, ECIO 2010, 7-9 April 2010, Cambridge, United Kingdom (pp. ThP34).
|Abstract:||Neodymium-doped Al2O3 layers were deposited on thermally oxidized Si substrates and channel waveguides were patterned using reactive-ion etching. Internal net gain on the Nd3+ transitions at 880, 1064, and 1330 nm was investigated,
yielding a maximum gain of 6.3 dB/cm at 1064 nm. Values for the energy-transfer upconversion parameter for different Nd3+
concentrations were deduced.
|Item Type:||Conference or Workshop Item|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/75258|
|Export this item as:||BibTeX|
Daily downloads in the past month
Monthly downloads in the past 12 months
Repository Staff Only: item control page