Silicon Etching in HNO3/HF Solution: Charge Balance for the Oxidation Reaction

Kooij, E.S. and Butter, K. and Kelly, J.J. (1999) Silicon Etching in HNO3/HF Solution: Charge Balance for the Oxidation Reaction. Electrochemical and solid-state letters, 2 (4). pp. 178-180. ISSN 1099-0062

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Abstract:	The potential dependence of the current and the etch rate of p- and n-type silicon electrodes in 6 M HNO3–6 M HF solution was investigated. Hydrogen evolved during etching at the open-circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced.
Item Type:	Article
Copyright:	©1999 The Electrochemical Society
Link to this item:	http://purl.utwente.nl/publications/75183
Official URL:	http://dx.doi.org/10.1149/1.1390775
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