Infrared induced visible emission from porous silicon: the mechanism of anodic oxidatio

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Kooij, E.S. and Rama, A.R. and Kelly, J.J. (1997) Infrared induced visible emission from porous silicon: the mechanism of anodic oxidatio. Surface Science, 370 (2-3). pp. 125-135. ISSN 0039-6028

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Abstract:The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously suggested mechanism, in which the capture of a valence band hole in a surface bond of the porous semiconductor gives rise to a surface state intermediate capable of thermally injecting an electron into the conduction band.

Item Type:Article
Copyright:© 1997 Elsevier Science B.V.
Link to this item:http://purl.utwente.nl/publications/75177
Official URL:http://dx.doi.org/10.1016/S0039-6028(96)00960-0
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