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Infrared induced visible emission from porous silicon: the mechanism of anodic oxidatio
Kooij, E.S. and Rama, A.R. and Kelly, J.J. (1997) Infrared induced visible emission from porous silicon: the mechanism of anodic oxidatio. Surface Science, 370 (2-3). pp. 125-135. ISSN 0039-6028
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| Abstract: | The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously suggested mechanism, in which the capture of a valence band hole in a surface bond of the porous semiconductor gives rise to a surface state intermediate capable of thermally injecting an electron into the conduction band.
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| Item Type: | Article |
| Copyright: | © 1997 Elsevier Science B.V. |
| Link to this item: | http://purl.utwente.nl/publications/75177 |
| Official URL: | http://dx.doi.org/10.1016/S0039-6028(96)00960-0 |
| Export this item as: | BibTeX EndNote HTML Citation Reference Manager |
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