Silicon Nanowire Fabrication Using Edge and Corner Lithography


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Yagubizade, Hadi and Berenschot, Erwin and Jansen, Henri V. and Elwenspoek, Miko and Tas, Niels R. (2010) Silicon Nanowire Fabrication Using Edge and Corner Lithography. In: IEEE Nanotechnology Materials and Devices Conference, NMDC 2010, 12-14 Oct 2010, Monterey, CA, USA (pp. pp. 128-131).

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Abstract:This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features to the formed. The pattern formed by conventional microlithography determines the location. The presented method is based on the low etch rate of <111>-planes. Initially, using edge lithography, nanoridges with ∼71° angle with the wafer surface and bound by <111>-planes are fabricated. Thereafter, corner lithography is used. The fabricated SiNWs can be isolated from the substrate by oxidation of the thin silicon base.
Item Type:Conference or Workshop Item
Copyright:© 2010 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/75032
Official URL:http://dx.doi.org/10.1109/NMDC.2010.5652181
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