Silicon Nanowire Fabrication Using Edge and Corner Lithography


Yagubizade, Hadi and Berenschot, Erwin and Jansen, Henri V. and Elwenspoek, Miko and Tas, Niels R. (2010) Silicon Nanowire Fabrication Using Edge and Corner Lithography. In: IEEE Nanotechnology Materials and Devices Conference, NMDC 2010, 12-14 Oct 2010, Monterey, CA, USA (pp. pp. 128-131).

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Abstract:This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features to the formed. The pattern formed by conventional microlithography determines the location. The presented method is based on the low etch rate of <111>-planes. Initially, using edge lithography, nanoridges with ∼71° angle with the wafer surface and bound by <111>-planes are fabricated. Thereafter, corner lithography is used. The fabricated SiNWs can be isolated from the substrate by oxidation of the thin silicon base.
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Copyright:© 2010 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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