Understanding $Al_2O_3:Er^{3+}$ device performance


Agazzi, L. and Bradley, J.D.B. and Ay, F. and Wörhoff, K. and Pollnau, M. (2010) Understanding $Al_2O_3:Er^{3+}$ device performance. In: Annual Symposium of the IEEE Photonics Benelux Chapter 2010, 18-19 November 2010, Delft, The Netherlands (pp. pp. 261-264).

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Abstract:Al2O3:Er3+ thin films were deposited on Si wafers and subsequently structured. On-chip devices such as amplifiers, ring lasers and a loss-less splitter were fabricated; data transmission at 170 Gbits/s and monolithic integration with SOI waveguides were demonstrated. The discrepancy between device performance and predictions deriving from the analysis of spectroscopic data prompted us to develop an Er3+ rate-equation model that, besides accounting for “slow” energy-transfer and upconversion processes, also considered the presence of luminescence quenching mechanisms occurring at significantly shorter time scales.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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