Metastable precursor for oxygen dissociation on Si(0 0 1) 2 × 1 resolved by high lateral resolution work function measurements

Sturm, J.M. and Croes, G.O. and Wormeester, H. and Poelsema, Bene (2007) Metastable precursor for oxygen dissociation on Si(0 0 1) 2 × 1 resolved by high lateral resolution work function measurements. Surface Science, 601 (12). pp. 2498-2507. ISSN 0039-6028

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Abstract:	The development of contact potential difference (CPD) inhomogeneities on oxide-covered silicon samples was investigated by monitoring the CPD of a clean Si(0 0 1) 2 × 1 surface during exposure to molecular oxygen with Kelvin Probe Force Microscopy. A steady fluctuation level is reached within the completion of a monolayer of oxide. Non-continuous oxygen exposure at room temperature and at lower temperatures unequivocally demonstrates the coexistence of two oxidation processes. One of these processes involves a metastable precursor to oxygen dissociation
Item Type:	Article
Copyright:	© 2007 Elsevier B.V.
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/74896
Official URL:	http://dx.doi.org/10.1016/j.susc.2007.04.077
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