Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors


Bartic, Carmen and Jansen, H. and Campitelli, Andrew and Borghs, Staf (2002) Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors. Organic Electronics, 3 (2). pp. 65-72. ISSN 1566-1199

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:In this paper we report the use of Ta2O5 as gate dielectric material for organic thin-film transistors. Ta2O5 has already attracted a lot of attention as insulating material for VLSI applications. We have deposited Ta2O5 thin-films with different thickness by means of electron-beam evaporation. Being a relatively low-temperature process, this method is particularly suitable for organic thin-film transistor fabrication on plastic substrates. Deposition and patterning are achieved in one step by the use of shadow masks. The dielectric can be evaporated on top of the semiconducting layer. In this way a large variety of structures can be realized. Poly(3-hexylthiophene) was used as semiconducting material in the transistor structure. Such transistors are operating at voltages smaller than −3 V. Having a high dielectric constant (r=21), Ta2O5 facilitates the charge carrier accumulation in the transistor channel at much lower electrical fields. The properties of the dielectric material as well as the operation of the organic transistors with a Ta2O5 gate dielectric are discussed.
Item Type:Article
Copyright:© 2002 Elsevier
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/74815
Official URL:http://dx.doi.org/10.1016/S1566-1199(02)00034-4
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page