Investigations on double-diffused MOS transistors under ESD zap conditions

Boselli, Gianluca and Meeuwsen, Stan and Mouthaan, Ton and Kuper, Fred (2001) Investigations on double-diffused MOS transistors under ESD zap conditions. Microelectronics Reliability, 41 (3). pp. 395-405. ISSN 0026-2714

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Abstract:	In this paper we analyzed, through experiments and 2-D simulations, the behavior under high reverse voltages of a double-diffused MOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching on of the parasitic bipolar structure and in the failure mechanism.
Item Type:	Article
Copyright:	© 2001 Elsevier
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/74524
Official URL:	http://dx.doi.org/10.1016/S0026-2714(00)00240-7
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