Barrier properties of ALD1,5N thin films


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Bystrova, S. and Holleman, J. and Aarnink, A.A.I. and Wolters, R.A.M. (2005) Barrier properties of ALD1,5N thin films. In: International Conference on Advanced Metallization, 19-21 October 2004, San Diego, California, USA (pp. pp. 769-774).

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Abstract:W1.5N films grown by ALD from WF6, NH3, C2H4 and SiH4 as precursors were tested as Cu diffusion barriers in p+/n diodes and capacitors with SiO2 as a dielectric. I-V and C-V, C-t characteristics were measured before and after anneal. The layers exhibit excellent barrier properties against both Cu and Al interaction with silicon. No changes of current and capacitance attributed to a barrier failure were observed after annealing at 400°C. Samples without the barrier showed a drastic change of the I-V characteristics. The composition of the films was W1.5N as determined with RBS, being a mixture of WN and W2N phases The RMS- roughness was as low as 0.5-0.7 nm for a film with a thickness of 25 nm.
Item Type:Conference or Workshop Item
Copyright:© 2005 Materials Research Society
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Science and Technology (TNW)
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/74237
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Metis ID: 219223