Barrier properties of ALD1,5N thin films

Bystrova, S. and Holleman, J. and Aarnink, A.A.I. and Wolters, R.A.M. (2005) Barrier properties of ALD1,5N thin films. In: International Conference on Advanced Metallization, 19-21 October 2004, San Diego, California, USA.

Preview

PDF
78Kb

Abstract:	W1.5N films grown by ALD from WF6, NH3, C2H4 and SiH4 as precursors were tested as Cu diffusion barriers in p+/n diodes and capacitors with SiO2 as a dielectric. I-V and C-V, C-t characteristics were measured before and after anneal. The layers exhibit excellent barrier properties against both Cu and Al interaction with silicon. No changes of current and capacitance attributed to a barrier failure were observed after annealing at 400°C. Samples without the barrier showed a drastic change of the I-V characteristics. The composition of the films was W1.5N as determined with RBS, being a mixture of WN and W2N phases The RMS- roughness was as low as 0.5-0.7 nm for a film with a thickness of 25 nm.
Item Type:	Conference or Workshop Item
Copyright:	© 2005 Materials Research Society
Faculty:	Science and Technology (TNW) Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Mesoscale Chemical Systems (MCS) Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/74237
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 219223