Double-barrier Josephson structures as the novel elements for superconducting large-scale integrated circuits

Share/Save/Bookmark

Kupriyanov, M. Yu. and Brinkman, A. and Golubov, A.A. and Siegel, M. and Rogalla, H. (1999) Double-barrier Josephson structures as the novel elements for superconducting large-scale integrated circuits. Physica C: Superconductivity, 326-32 . pp. 16-45. ISSN 0921-4534

[img] PDF
Restricted to UT campus only
: Request a copy
554kB
Abstract:An overview of the current status of different types of non-hysteretic Josephson junctions is given with emphasis on double-barrier structures. The results of theoretical work on double-barrier SIS′IS Josephson junctions (I is a tunnel barrier, S′ is a thin film with TC′<TC) are presented. The microscopic model for the supercurrent is developed for two cases: the S′ interlayer in the clean and in the dirty limit. The model describes the cross-over from direct Josephson coupling of the external S electrodes to the regime of two serially connected SIS′ junctions. We calculate the ICRN product as a function of the TC′/TC ratio, the interlayer thickness and the barrier strengths and compare the theory with experimental data for Nb/AlOx/Al/AlOx/Nb junctions. We argue that these junctions are very promising in rapid single flux quantum (RSFQ) and programmable voltage standard applications, since they are intrinsically shunted and have controllable interfaces. We formulate the requirements for materials and interface barriers in order to increase critical current densities and ICRN products in double-barrier junctions.
Item Type:Article
Copyright:© 1999 Elsevier
Faculty:
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/74161
Official URL:http://dx.doi.org/10.1016/S0921-4534(99)00408-6
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 128796