SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

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Houtsma, V.E. and Holleman, J. and Salm, C. and Woerlee, P.H. (1999) SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material. Microelectronic Engineering, 48 (1-4). pp. 415-418. ISSN 0167-9317

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Abstract:In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate(+Vg) and gate-injection(−Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si−0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.
Item Type:Article
Copyright:© 1999 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/74012
Official URL:http://dx.doi.org/10.1016/S0167-9317(99)00416-5
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