Surface disorder production during plasma immersion implantation


Lohner, T. and Khanh, N.Q. and Petrik, P. and Biro, L.P. and Fried, M. and Pinter, I. and Lehnert, W. and Frey, L. and Ryssel, H. and Wentink, D.J. and Gyulai, J. (1998) Surface disorder production during plasma immersion implantation. Thin Solid Films, 313-31 . pp. 254-258. ISSN 0040-6090

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:Comparative investigations were performed using high-depth-resolution Rutherford backscattering (RBS) combined with channeling, spectroellipsometry (SE) and atomic force microscopy (AFM) to analyze surface disorder and surface roughness formed during plasma immersion implantation of silicon (100) substrates in a gas mixture containing PH3. In order to enhance the sensitivity to the determination of the oxygen content of the surface oxide layer, the 3.05 MeV (4He+, 4He+) nuclear resonance was used in combination with channeling. For the analysis of SE data we used the method in which an appropriate optical model is assumed and a best fit to the model parameters is obtained (i.e. the thickness of surface oxide and damaged silicon layers and the volume fraction of the components). Evaluation of RBS spectra yields damage profiles consistent with those obtained by SE modelling.
Item Type:Article
Copyright:© 1998 Elsevier
Research Group:
Link to this item:
Official URL:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page