Effect of current crowding on electromigration lifetime investigated by simulation and experiment

Nguyen, Van Hieu and Salm, Cora (2010) Effect of current crowding on electromigration lifetime investigated by simulation and experiment. Computational Materials Science, 49 (4). pp. 235-238. ISSN 0927-0256

PDF
Restricted to UT campus only: Request a copy
472Kb

Abstract:	The impact of current crowding on the electromigration lifetime of various interconnect layout designs was investigated through simulations and experiments. Most 2D electromigration simulators use the conventional electromigration model which does not include the effect of current crowding on the electromigration lifetime while electromigration experiments have shown this effect to be important. A new model including this effect is discussed for electromigration simulator improvement in the future. Then the current crowding effect was experimentally investigated in detail in different interconnect layout designs. This has provided a good understanding of the current crowding effect that can be very useful to improve the reliability of multilevel interconnects in the design phase
Item Type:	Article
Copyright:	© 2010 Elsevier
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/73176
Official URL:	http://dx.doi.org/10.1016/j.commatsci.2010.04.003
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page