Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces

Share/Save/Bookmark

Zandvliet, H.J.W. and Elswijk, H.B. and Loenen van, E.J. and Tsong, I.S.T. (1992) Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces. Physical review B: Condensed matter, 46 (12). pp. 7581-7587. ISSN 1095-3795

[img]
Preview
PDF
1781Kb
Abstract:Surfaces of Si(111)-(7×7) and Si(100)-(2×1) were bombarded by 3-keV Ar+ ions at doses of ≤1012 ions cm-2 to study the effect of individual ion impacts on the atomic structure of surfaces. Atom-resolved images show damaged regions of missing and displaced atoms. Current-imaging tunneling spectroscopy shows rest-atom states in the bombarded areas on Si(111), in agreement with line-scan measurements indicating a monatomic step-height difference between bombarded and unbombarded areas. Upon annealing to 750 °C for 2 min, complete (7×7) was restored for the bombarded Si(111) surface whereas ordering of vacancies into line defects was observed for Si(100).
Item Type:Article
Copyright:© 1992 The American Physical Society
Faculty:
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/73162
Official URL:http://dx.doi.org/10.1103/PhysRevB.46.7581
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 128910