Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces

Feil, H. and Zandvliet, H.J.W. and Tsai, M.-H. and Dow, John D. and Tsong, I.S.T. (1992) Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces. Physical Review Letters, 69 (21). pp. 3076-3079. ISSN 0031-9007

Preview

PDF
1121Kb

Abstract:	Scanning tunneling microscopy STM images of Si(100)-(2×1) surfaces bombarded by low-dose 3-keV Ar+ ions showed random defects which ordered into line defects perpendicular to the dimer rows upon annealing at elevated temperatures. Molecular-dynamics simulations were performed to explain the shapes and sizes of the observed random defects and also to examine the stability of ordered defects. Our simulations showed good agreement with STM observations.
Item Type:	Article
Copyright:	© 1992 The American Physical Society
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/73161
Official URL:	http://dx.doi.org/10.1103/PhysRevLett.69.3076
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 128909