Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces


Feil, H. and Zandvliet, H.J.W. and Tsai, M.-H. and Dow, John D. and Tsong, I.S.T. (1992) Random and ordered defects on ion-bombarded Si(100)-(2×1) surfaces. Physical Review Letters, 69 (21). pp. 3076-3079. ISSN 0031-9007

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Abstract:Scanning tunneling microscopy STM images of Si(100)-(2×1) surfaces bombarded by low-dose 3-keV Ar+ ions showed random defects which ordered into line defects perpendicular to the dimer rows upon annealing at elevated temperatures. Molecular-dynamics simulations were performed to explain the shapes and sizes of the observed random defects and also to examine the stability of ordered defects. Our simulations showed good agreement with STM observations.
Item Type:Article
Copyright:© 1992 The American Physical Society
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/73161
Official URL:https://doi.org/10.1103/PhysRevLett.69.3076
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