Direct determination of the step-edge formation energies of the energetically stable and unstable double-layer step edges of Si(001)

Zandvliet, H.J.W. and Dijken van, S. and Poelsema, Bene (1996) Direct determination of the step-edge formation energies of the energetically stable and unstable double-layer step edges of Si(001). Physical review B: Condensed matter, 53 (23). pp. 15429-15431. ISSN 1095-3795

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Abstract:	Scanning tunneling microscopy images of 4.5° misoriented double B stepped Si(001) have been analyzed to determine the double-layer step-edge formation energies of the energetically stable double step (B-type) as well as the energetically unstable double step (A-type). The ordering of the various single- and double-layer step-edge formation energies is in accordance with semiempirical tight-binding-based total-energy calculations performed by Chadi [Phys. Rev. Lett. 59, 1691 (1987)]. Finally, the miscut angle at which the transition between the single- and double-layer stepped surface occurs as calculated using the experimentally obtained step-edge formation energies is in agreement with the experiments
Item Type:	Article
Copyright:	© 1996 The American Physical Society
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/73157
Official URL:	http://dx.doi.org/10.1103/PhysRevB.53.15429
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