Spontaneous formation of an ordered c(4×2)-(2×1) domain pattern on Ge(001)

Zandvliet, H.J.W. and Swartzentruber, B.S. and Wulfhekel, W. and Hattink, B.J. and Poelsema, Bene (1998) Spontaneous formation of an ordered c(4×2)-(2×1) domain pattern on Ge(001). Physical Review B: Condensed matter and materials physics, 57 (12). R6803-R6806. ISSN 1098-0121

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Abstract:	Scanning-tunneling-microscopy measurements of Ge(001) reveal the presence of an ordered domain pattern consisting of c(4×2) and (2×1) domains arranged in stripes with a width of several dimer row spacings, oriented along the dimer rows. We suggest that the existence of a soft domain wall between the domains combined with a difference in the stress component along the dimer bond for the (2×1) and c(4×2) domains, respectively, can conspire to produce such an ordered domain phase. A simple model based on strain relaxation explains the observed size of the domain pattern.
Item Type:	Article
Copyright:	© 1998 The American Physical Society
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/73151
Official URL:	http://dx.doi.org/10.1103/PhysRevB.57.R6803
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