The influence of strain on the diffusion of Si dimers on Si(001)

Zoethout, E. and Gürlü, O. and Zandvliet, H.J.W. and Poelsema, Bene (2000) The influence of strain on the diffusion of Si dimers on Si(001). Surface Science, 452 (1-3). pp. 247-252. ISSN 0039-6028

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Abstract:	The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit.
Item Type:	Article
Copyright:	© 2000 Elsevier Science B.V.
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/73141
Official URL:	http://dx.doi.org/10.1016/S0039-6028(00)00338-1
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