The influence of strain on the diffusion of Si dimers on Si(001)

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Zoethout, E. and Gürlü, O. and Zandvliet, H.J.W. and Poelsema, Bene (2000) The influence of strain on the diffusion of Si dimers on Si(001). Surface Science, 452 (1-3). pp. 247-252. ISSN 0039-6028

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Abstract:The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit.
Item Type:Article
Copyright:© 2000 Elsevier Science B.V.
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/73141
Official URL:http://dx.doi.org/10.1016/S0039-6028(00)00338-1
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