Adatom assisted stabilization of ad dimers on Ge(001)

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Zoethout, E. and Zandvliet, H.J.W. and Poelsema, Bene (2001) Adatom assisted stabilization of ad dimers on Ge(001). Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19 (4). pp. 1868-1870. ISSN 0734-2101

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Abstract:The early stage of silicon heteroepitaxial growth and germanium homoepitaxial growth on Ge(001) has caused a discrepancy between experimental and theoretical work. Previously a dimer configuration was identified experimentally, which theoretically has been predicted to be unfavorable: the D dimer. Upon careful reinvestigation this cluster turns out to be not a two-atom, but a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a C dimer, a small epitaxial island (BD) or the three-atom cluster of Si on Si(001)
Item Type:Article
Copyright:© 2001 American Vacuum Society
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/73080
Official URL:http://dx.doi.org/10.1116/1.1365126
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