Diffusion of Si and Ge dimers on Ge (001) surfaces

Afanasieva, T.V. and Bulavenko, S.Yu and Koval, I.F. and Zandvliet, H.J.W. (2003) Diffusion of Si and Ge dimers on Ge (001) surfaces. Journal of Applied Physics, 93 (3). pp. 1452-1456. ISSN 0021-8979

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Abstract:	We have studied the various diffusion pathways of Si and Ge dimers on the Ge (001) surface using scanning tunneling microscopy. The adsorbed dimers can be classified into two categories: Dimers adsorbed on top of the substrate rows and dimers adsorbed in the troughs between the substrate rows. There are three different diffusion pathways for the dimers: Along the substrate rows, across the substrate rows, and in the troughs between the substrate rows. The activation barriers for diffusion of these three pathways have been determined for both Ge and Si dimers on Ge (001). The barriers for dimer diffusion of the system Ge/Ge (001) are slightly lower than for the Si/Ge (001) system. As compared to Si on Si (001) the activation barriers for dimer diffusion on Ge (001) are significantly lower
Item Type:	Article
Copyright:	© 2003 American Institute of Physics
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/73077
Official URL:	http://dx.doi.org/10.1063/1.1533107
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