Resistless high resolution optical lithography on silicon

Share/Save/Bookmark

Kramer, N. and Niesten, M. and Schönenberger, C. (1995) Resistless high resolution optical lithography on silicon. Applied Physics Letters, 67 (20). pp. 2989-2991. ISSN 0003-6951

open access
[img] PDF
169kB
Abstract:In this letter, we report on the high resolution patterning of a silicon surface without using a resist layer. A hydrogen passivated silicon surface is chemically modified by illumination with ultraviolet light (UV, λ=350.7 nm) in air. Auger electron spectroscopy (AES) revealed that silicon oxide was formed at the illuminated areas. A light interference pattern was made on the silicon surface by two UV laser beams, oxidation occurred only at the maximum intensity, but not at the minimum. In this way oxide lines were fabricated with a width below 200 nm on a 500 nm period. The oxide lines were used as a wet etch mask to etch more than 25 nm into Si(110) without affecting the oxide. The advantage of this technique is that it is a very simple process which allows the high resolution patterning over large areas of silicon without using a resist.
Item Type:Article
Copyright:© 1995 American Institute of Physics
Research Group:
Link to this item:http://purl.utwente.nl/publications/72932
Official URL:http://dx.doi.org/10.1063/1.114835
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 128897