PECVD silicon nitride diaphragms for condenser microphones

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Scheeper, P.R. and Voorthuyzen, J.A. and Bergveld, P. (1991) PECVD silicon nitride diaphragms for condenser microphones. Sensors and Actuators B: Chemical, 4 (1-2). pp. 79-84. ISSN 0925-4005

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Abstract:The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile stress. Aluminium can be etched selectively with respect to the silicon nitride films. Using aluminium as a sacrificial layer, 300 × 300 μm silicon nitride diaphragms have been made. Admittance measurements on silicon nitride capacitances have shown that the insulating properties are sufficiently good for application as a microphone diaphragm.
Item Type:Article
Copyright:© 1991 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/72931
Official URL:http://dx.doi.org/10.1016/0925-4005(91)80180-R
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