Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

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Dobrovolskiy, S. and Yakshin, A.E. and Tichelaar, F.D. and Verhoeven, J. and Louis, E. and Bijkerk, F. (2010) Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing. Nuclear Instruments and Methods in Physics Research. Section B: Beam interactions with materials and atoms, 268 (6). pp. 560-567. ISSN 0168-583X

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Abstract:Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being formed. We investigated the effect of thermal annealing on further completion of the carbide layer. For the annealing we used a vacuum furnace, a rapid thermal annealing system in argon atmosphere, and a scanning e-beam, for different temperatures, heating rates, and annealing durations. Annealing to a temperature as low as 600 °C resulted in the formation of a 4.5 nm smooth, amorphous carbide layer in the carbon-implanted region. However, annealing at a higher temperature, 1000 °C, lead to the formation of a rough poly-crystalline carbide layer. The multilayers were characterized by grazing incidence X-ray reflectometry and cross section TEM.
Item Type:Article
Copyright:© 2010 Elsevier B.V.
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/72907
Official URL:http://dx.doi.org/10.1016/j.nimb.2009.12.022
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