Reflective multilayer optics for 6.7 nm wavelength radiation sources and next generation lithography

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Tsarfati, T. and Kruijs, R.W.E. van de and Zoethout, E. and Louis, E. and Bijkerk, F. (2009) Reflective multilayer optics for 6.7 nm wavelength radiation sources and next generation lithography. Thin Solid Films, 518 (5). pp. 1365-1368. ISSN 0040-6090

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Abstract:Reported is a computational and chemical analysis of near normal incidence reflective multilayer optics for 6.7 nm wavelength applications in e.g. the Free Electron Laser FLASH and next generations of EUV lithography. We model that combinations of B or B4C with La offer a reflectivity of ~ 70%. The small reflectivity bandwidth poses problems in applications, but it can be significantly improved by replacing La with Th or U. Grazing incidence X-ray reflectometry, cross-section TEM, and in-depth XPS analysis of B/La and B4C/La multilayers reveal chemical reactivity at the interfaces. Significant LaBx interlayer formation is observed in especially B/La multilayers, stressing the relevance of interface passivation. We propose nitridation of the interfaces, which mitigates interlayer formation and simultaneously increases optical contrast.
Item Type:Article
Copyright:© 2009 Elsevier B.V.
Faculty:
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/72895
Official URL:http://dx.doi.org/10.1016/j.tsf.2009.09.073
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Metis ID: 265956