In-depth agglomeration of d-metals at Si-on-Mo interfaces

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Tsarfati, Tim and Zoethout, Erwin and Kruijs van de, Robbert and Bijkerk, Fred (2009) In-depth agglomeration of d-metals at Si-on-Mo interfaces. Journal of Applied Physics, 105 (06). 064314. ISSN 0021-8979

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Abstract:Reflective Si/Mo multilayer mirrors with protective d-metal surfaces onto a range of upper Mo and Si layer thicknesses have been grown with physical vapor deposition and investigated on diffusion and in-depth compound formation. Laterally inhomogeneous upward Si and downward d-metal diffusion occurs through Mo layers up to 2 nm thickness. Especially Ru and Rh agglomerate and form silicides such as Ru2Si3 and Rh2Si not in the midst of the Si layer but at the Si/Mo interface. This appears to be mediated by MoSi2 presence at the Si/Mo interface that acts as precursor via better lattice compatibility and lowering of formation energy.
Item Type:Article
Copyright:© 2009 American Institute of Physics
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/72886
Official URL:http://dx.doi.org/10.1063/1.3097753
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Metis ID: 266572