Conductance studies on different types of Nb/Al, AlOx,(/A1)/Nb Josephson tunnel junctions

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Adelerhof, D.J. and Houwman, E.P. and Veldhuis, D. and Flokstra, J. and Rogalla, H. (1990) Conductance studies on different types of Nb/Al, AlOx,(/A1)/Nb Josephson tunnel junctions. Physica B: Condensed Matter, 165-16 (Part 2). pp. 1581-1582. ISSN 0921-4526

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Abstract:The conductance-voltage characteristics of different types of Josephson tunnel junctions have been measured at 4.2 K: symmetric Nb/Al, AlOx/Al/Nb, asymmetric Nb/Al, AlOx/Nb and Nb/Al/AlOx-/AlOx/Nb, containing a double oxidation layer. The symmetric junctions can be described very well by a trapezoidal potential barrier model. The asymmetric junctions show less agreement with theory. In these junctions resistance switching occurs, possibly due to charge trapping. The resistance is lower than in symmetric junctions. The conductance measurements on double oxidation layer junctions show, that this type of junction has an inhomogeneous oxide layer.
Item Type:Article
Copyright:© 1990 Elsevier
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/72861
Official URL:http://dx.doi.org/10.1016/S0921-4526(09)80376-1
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