Photoelectric effects in Ta2O5SiO2Si structures

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Voorthuyzen, J.A. and Bergveld, P. (1990) Photoelectric effects in Ta2O5SiO2Si structures. Sensors and Actuators B: Chemical, 1 (1-6). pp. 350-353. ISSN 0925-4005

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Abstract:Investigating the behaviour of ISFETs with a Ta2O5SiO2 dielectric it has been observed that their long-term stability is strongly influenced by previous exposures to daylight. A Ta2O5 layer, as prepared for ISFET application, will become conductive by exposure to optical radiation. This conduction is due to bulk traps with a depth of 1.6–3.2 eV. It is shown that a low temperature anneal step in the presence of an A1 layer on top of the Ta2O5 layer may eliminate these traps and reduce the associated threshold voltage instability.
Item Type:Article
Copyright:© 1990 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/72851
Official URL:http://dx.doi.org/10.1016/0925-4005(90)80228-R
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Metis ID: 112153