Growth of silicon nitride films by bombarding amorphous silicon with N+ ions: MD simulation

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Gou, F. and Gleeson, M.A. and Kleyn, A.W. and Kruijs, R.W.E. van de and Yakshin, A.E. and Bijkerk, F. (2009) Growth of silicon nitride films by bombarding amorphous silicon with N+ ions: MD simulation. Nuclear Instruments and Methods in Physics Research. Section B: Beam interactions with materials and atoms, 267 (18). pp. 3245-3248. ISSN 0168-583X

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Abstract:In this study, the molecular dynamics simulation method was employed to investigate the growth of silicon nitride films by using N+ ions, with energies of 50, 100, 150 and 200 eV, to bombard an amorphous silicon surface at 300 K. After an initial period of N+ bombardment, saturation of the number of N atoms deposited on the surface is observed, which is in agreement with experiments. During subsequent steady state deposition, a balance between uptake of N by the surface and sputtering of previously deposited N is established. The Si(Nx) (x = 1–4) and N(Siy) (y = 1–3) bond configurations in the grown films are analyzed.
Item Type:Article
Copyright:© 2009 Elsevier B.V.
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/72832
Official URL:http://dx.doi.org/10.1016/j.nimb.2009.06.091
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Metis ID: 265958