Growth of silicon nitride films by bombarding amorphous silicon with N+ ions: MD simulation

Gou, F. and Gleeson, M.A. and Kleyn, A.W. and Kruijs van de, R.W.E. and Yakshin, A.E. and Bijkerk, F. (2009) Growth of silicon nitride films by bombarding amorphous silicon with N+ ions: MD simulation. Nuclear Instruments and Methods in Physics Research. Section B: Beam interactions with materials and atoms, 267 (18). pp. 3245-3248. ISSN 0168-583X

PDF
Restricted to UT campus only: Request a copy
534Kb

Abstract:	In this study, the molecular dynamics simulation method was employed to investigate the growth of silicon nitride films by using N+ ions, with energies of 50, 100, 150 and 200 eV, to bombard an amorphous silicon surface at 300 K. After an initial period of N+ bombardment, saturation of the number of N atoms deposited on the surface is observed, which is in agreement with experiments. During subsequent steady state deposition, a balance between uptake of N by the surface and sputtering of previously deposited N is established. The Si(Nx) (x = 1–4) and N(Siy) (y = 1–3) bond configurations in the grown films are analyzed.
Item Type:	Article
Copyright:	© 2009 Elsevier B.V.
Faculty:	Science and Technology (TNW)
Research Group:	Laser Physics and Nonlinear Optics (LPNO)
Link to this item:	http://purl.utwente.nl/publications/72832
Official URL:	http://dx.doi.org/10.1016/j.nimb.2009.06.091
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 265958