The Ti/c-Si solid state reaction : II. Additional measurements by means of RBS, XPS and AES

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Nijs de, J.M.M. and Silfhout van, A. (1990) The Ti/c-Si solid state reaction : II. Additional measurements by means of RBS, XPS and AES. Applied Surface Science, 40 (4). pp. 349-358. ISSN 0169-4332

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Abstract:In a previous paper [Appl. Surface Sci. 40 (1990) 333], we have reported the results of a spectroscopic ellipsometric study of the c-Si/Ti solid state reaction. For this purpose we have grown and heated thin (≈10nm) Ti films on a clean c-Si substrate. The investigation revealed that already at moderate temperatures a metastable silicide (≈350°C), probably a monosilicide, and disilicide (≈450°C) are formed. These two metastable transition states, denoted by state I and II respectively, and the final disilicide (state III, ≈700°C) are additionally studied by means of a number of quantitative techniques, such as RBS, XPS and AES. The results reveal a Si-enriched monosilicide state I, Si: Ti = 1.2 and a stoichiometric but Si segregated disilicide state II; surface composition approximately TiSi3. The finally obtained disilicide (III) has recrystallized into probably large, flat islands embedded in a c-Si matrix.
Item Type:Article
Copyright:© 1990 Elsevier
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Link to this item:http://purl.utwente.nl/publications/72820
Official URL:http://dx.doi.org/10.1016/0169-4332(90)90034-W
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