Low energy ion bombardment on c-Ge surfaces

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Dekker, J. and Zandvliet, H.J.W. and Silfhout van, A. (1990) Low energy ion bombardment on c-Ge surfaces. Vacuum, 41 (7-9). pp. 1690-1691. ISSN 0042-207X

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Abstract:Amorphous germanium thin films (25–60 Å) were prepared by low energy (500, 800 eV) bombardment of noble gas ions (Ne, Ar, Kr) on c-Ge(001). The films were examined by spectroscopic ellipsometry and analysed using linear regression analysis (LRA). The most probable composition of the damaged toplayer is that of void free amorphous germanium, comparable with those obtained by dc-magnetron sputtering. The results are in excellent agreement with Monte Carlo simulations of the transport of ions in matter (TRIM86).
Item Type:Article
Copyright:© 1990 Elsevier
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/72672
Official URL:http://dx.doi.org/10.1016/0042-207X(90)94056-V
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