Fast RF-CV characterization through high-speed 1-port S-parameter measurements

Herfst, R.W. and Steeneken, P.G. and Tiggelman, M.P.J. and Stulemeijer, J. and Schmitz, J. (2010) Fast RF-CV characterization through high-speed 1-port S-parameter measurements. In: Proceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010, 22-25 Mar 2010, Hirosjima, Japan.

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Abstract:	We present a novel method to measure the capacitance-voltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/72453
Official URL:	http://dx.doi.org/10.1109/ICMTS.2010.5466829
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