Fabrication and characterization of the charge-plasma diode


Rajasekharan, B. and Hueting, R.J.E. and Salm, C. and Hemert, T. van and Wolters, R.A.M. and Schmitz, J. (2010) Fabrication and characterization of the charge-plasma diode. IEEE electron device letters, 31 (6). pp. 528-530. ISSN 0741-3106

open access
Abstract:We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.
Item Type:Article
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/72448
Official URL:https://doi.org/10.1109/LED.2010.2045731
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page