Ferroelectric properties of epitaxial Pb(Zr,Ti)O3 thin films on silicon by control of crystal orientation

Dekkers, Matthijn and Nguyen, Minh D. and Steenwelle, Ruud and Riele te, Paul M. and Blank, Dave H.A. and Rijnders, Guus (2009) Ferroelectric properties of epitaxial Pb(Zr,Ti)O3 thin films on silicon by control of crystal orientation. Applied Physics Letters, 95 (1). 012902. ISSN 0003-6951

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Abstract:	Crystalline Pb(Zr,Ti)O3 (PZT) thin films between metallic-oxide SrRuO3 (SRO) electrodes were prepared using pulsed laser deposition on CeO2/yttria-stabilized zirconia buffered silicon (001) substrates. Different deposition conditions for the initial layers of the bottom SRO electrode result in an orientation switch. Either (110)- or (001)-oriented SRO thin films are obtained and the PZT films deposited on the bottom electrode continued both growth directions. The ferroelectric characteristics of the SRO/PZT/SRO capacitors are found to be strongly dependent on their crystalline orientation: PZT (001)-oriented thin films showed stable, high quality ferroelectric response, while the remnant polarization of the PZT (110)-oriented thin films only show high response after multiple switching cycles.
Item Type:	Article
Copyright:	AIP
Faculty:	Science and Technology (TNW)
Research Group:	Inorganic Materials Science (IMS)
Link to this item:	http://purl.utwente.nl/publications/72415
Official URL:	http://dx.doi.org/10.1063/1.3163057
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