Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy

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Beukers, J.N. and Kleibeuker, J.E. and Koster, G. and Blank, D.H.A. and Rijnders, G. and Hilgenkamp, H. and Brinkman, A. (2010) Epitaxial EuO thin films by pulsed laser deposition monitored by in situ x-ray photoelectron spectroscopy. Thin Solid Films, 518 (18). pp. 5173-5176. ISSN 0040-6090

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Abstract:We have grown EuO thin films on silicon [001] and yttrium aluminate [110] from a europium metal target using pulsed laser deposition. In situ x-ray photoelectron spectroscopy has been used to determine the parameter window for stoichiometric EuO deposition. EuO is observed to grow in the relatively high pressure regime of 10−6–10−5 mbar, due to the large Eu flux during ablation. EuO is proven to grow epitaxially on yttrium aluminate [110]. Magnetization measurements confirm the stoichiometry of the film.
Item Type:Article
Copyright:Elsevier
Faculty:
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/72405
Official URL:http://dx.doi.org/10.1016/j.tsf.2010.04.071
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