Magnetization reversal mechanism in La0.67Sr0.33MnO3 thin films on NdGaO3 substrates

Share/Save/Bookmark

Mathews, M. and Houwman, E.P. and Boschker, H. and Rijnders, G. and Blank, D.H.A. (2010) Magnetization reversal mechanism in La0.67Sr0.33MnO3 thin films on NdGaO3 substrates. Journal of Applied Physics, 107 (1). 013904-1-013904-5. ISSN 0021-8979

[img] PDF
Restricted to UT campus only
: Request a copy
399kB
Abstract:The field angle dependence of the coercive field of La0.67Sr0.33MnO3 thin films grown epitaxially on NdGaO3 substrates with different crystallographic orientations was determined. All films show uniaxial anisotropy. The angle dependence of the coercivity is best described by a two-phase model, explaining the strong increase in the coercive field for increasing field angles, away from the easy axis direction, as well as the sharp decrease for angles close to the hard direction. This implies that magnetization reversal starts with the depinning of domain walls, analogous to the Kondorsky model. With increasing field the reversal in the domains is not abrupt, but is determined by the gradual displacement of the domain walls. These results are of significance for understanding and possibly engineering of the switching behavior of magnetic tunnel junctions.
Item Type:Article
Copyright:© 2010 American Institute of Physics
Faculty:
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/72404
Official URL:http://dx.doi.org/10.1016/10.1063/1.3273409
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page