A 1.2V 10μW NPN-Based Temperature Sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from −70°C to 125°C

Sebastiano, F. and Breems, L.J. and Makinwa, K.A.A. and Drago, S. and Leenaerts, D.M.W. and Nauta, B. (2010) A 1.2V 10μW NPN-Based Temperature Sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from −70°C to 125°C. In: Solid-State Circuits Conference Digest of Technical Papers (ISSCC) 2010 IEEE International, 7-11 Feb 2010, San Francisco.

Preview

PDF
4Mb

Abstract:	This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ) from –70°C to 125°C. This represents a 10-fold improvement in accuracy compared to other deep-submicron temperature sensors [1,2], and is comparable with that of state-of-the-art sensors implemented in larger-featuresize processes [3,4]. The sensor draws 8.3μA from a 1.2V supply and occupies an area of 0.1mm2, which is 45 times less than that of sensors with comparable accuracy [3,4]. These advances are enabled by the use of NPN transistors as sensing elements, the use of dynamic techniques i.e. correlated double sampling (CDS) and dynamic element matching (DEM), and a single room-temperature trim.
Item Type:	Conference or Workshop Item
Copyright:	IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/72402
Official URL:	http://dx.doi.org/10.1109/ISSCC.2010.5433895
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page