Highly efficient Gd, Lu co-doped KYW:Yb$^{3+}$ planar and channel waveguide lasers

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Geskus, D. and Aravazhi, S. and Wörhoff, K. and Pollnau, M. (2010) Highly efficient Gd, Lu co-doped KYW:Yb$^{3+}$ planar and channel waveguide lasers. In: IV International Workshop on Photonic and Electronic Materials, 5-7 July 2010, San Sebastian, Spain (pp. p. 50).

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Abstract:Waveguide lasing is achieved in crystalline Gd3+, Lu3+ co-doped KY(WO4)2:Yb3+ (KYW) thin layers grown on undoped substrates. While the optimum Yb concentration for lasing of 1-3at.% leads to a refractive-index contrast between layer and substrate of only a few times 10-4, further increase up to 10-2 can be achieved by co-doping the layer with large amounts of optically inert Gd and Lu ions. The resulting fundamental-mode waveguides have much smaller thickness, thus greatly facilitating microstructuring by ion beam etching. In such KYW:Gd,Lu,Yb layers, in which the Yb ion exhibits spectropcopic properties very similar to those in KYW:Yb, we have demonstrated planar waveguide lasing with 82% slope efficiency and channel waveguide lasing with 61% slope efficiency, with pump thresholds of only 18 mW and 5 mW, respectively.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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