Integrated amplifiers and lasers in Al2O3:Er3+ thin films on a silicon chip

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Pollnau, M. and Bradley, J.D.B. and Bernhardi, E.H. and Ay, F. and Ridder de, R.M. and Wörhoff, K. (2010) Integrated amplifiers and lasers in Al2O3:Er3+ thin films on a silicon chip. In: IV International Workshop on Photonic and Electronic Materials, 5-7 July 2010, San Sebastian, Spain.

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Abstract:Thin layers of Al2O3:Er3+ were reactively co-sputtered onto thermally oxidized silicon wafers and microstructured by reactive ion etching. Channel waveguides with losses of 0.3 dB/cm at 1.5 µm were obtained. Internal net optical gain was achieved over a bandwidth of 80 nm (1500-1580 nm), with a peak gain of 2.0 dB/cm at 1533 nm. 170 Gbit/s data amplification was demonstrated with open eye diagrams. Integrated channel waveguide ring lasers were realized with output powers of up to 9.5 µW, slope efficiencies of up to 0.11%, and a threshold power as low as 6.4 mW, with wavelength selection in the range 1530 to 1557 nm. Distributed-phase-shift holographically written surface relief Bragg gratings were integrated via reactive ion etching of SiO2 overlay films and single-mode lasing with a linewidth as low as 1.5 kHz was demonstrated.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/72291
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