Integrated amplifiers and lasers in Al2O3:Er3+ thin films on a silicon chip


Pollnau, M. and Bradley, J.D.B. and Bernhardi, E.H. and Ay, F. and Ridder, R.M. de and Wörhoff, K. (2010) Integrated amplifiers and lasers in Al2O3:Er3+ thin films on a silicon chip. In: IV International Workshop on Photonic and Electronic Materials, 5-7 July 2010, San Sebastian, Spain (pp. p. 44).

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:Thin layers of Al2O3:Er3+ were reactively co-sputtered onto thermally oxidized silicon wafers and microstructured by reactive ion etching. Channel waveguides with losses of 0.3 dB/cm at 1.5 µm were obtained. Internal net optical gain was achieved over a bandwidth of 80 nm (1500-1580 nm), with a peak gain of 2.0 dB/cm at 1533 nm. 170 Gbit/s data amplification was demonstrated with open eye diagrams. Integrated channel waveguide ring lasers were realized with output powers of up to 9.5 µW, slope efficiencies of up to 0.11%, and a threshold power as low as 6.4 mW, with wavelength selection in the range 1530 to 1557 nm. Distributed-phase-shift holographically written surface relief Bragg gratings were integrated via reactive ion etching of SiO2 overlay films and single-mode lasing with a linewidth as low as 1.5 kHz was demonstrated.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page