170 Gbit/s transmission in Al2O3:Er integrated amplifiers

Bradley, J.D.B. and Costa e Silva, M. and Gay, M. and Bramerie, L. and Driessen, A. and Wörhoff, K. and Simon, J.C. and Pollnau, M. (2010) 170 Gbit/s transmission in Al2O3:Er integrated amplifiers. In: Conference on Lasers and Electro-Optics, CLEO 2010, 16-21 May 2010, San Jose, CA, USA.

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Abstract:	Transmission of a 170 Gbit/s signal at 1550 nm was demonstrated in an integrated erbium-doped waveguide amplifier. Open eye diagrams and no power penalty were observed with the amplifier in the transmission system.
Item Type:	Conference or Workshop Item
Copyright:	© 2010 Optical Society of America
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/72282
Official URL:	http://www.opticsinfobase.org/abstract.cfm?URI=CLEO_Apps-2010-ATuB5
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