Dependence of silicon position-detector bandwidth on wavelength, power, and bias


Huisstede, J.H.G. and Rooijen, B.D. van and Werf, K.O. van der and Bennink, M.L. and Subramaniam, V. (2006) Dependence of silicon position-detector bandwidth on wavelength, power, and bias. Optics Letters, 31 (5). pp. 610-612. ISSN 0146-9592

open access
Abstract:We have developed a two-LED wobbler system to generate the spatial displacement of total light intensity on a detector surface, facilitating the acquisition of frequency responses up to 600 kHz with high accuracy. We have used this setup to characterize the low-pass filtering behavior of silicon-based position detectors for wavelengths above 850 nm by acquiring the frequency responses of several quadrant detectors and positionsensitive detectors as functions of wavelength, applied bias voltage, and total light power. We observed an increase in bandwidth for an increase in applied bias voltage and incident-light intensity. The combined effect of these parameters is strongly dependent on the detector used and has significant implications for the use of these detectors in scanning probe and optical tweezers applications.
Item Type:Article
Copyright:© 2006 Optical Society of America
Science and Technology (TNW)
Research Group:
Link to this item:
Official URL:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 233866