Experimental assessment of self-heating in SOI FinFETs


Scholten, A.J. and Smit, G.D.J. and Pijper, R.M.T. and Tiemijer, L.F. and Tuinhout, H.P. and Steen, J.-L.P.J. van der and Mercha, A. and Braccioli, M. and Klaassen, D.B.M. (2009) Experimental assessment of self-heating in SOI FinFETs. In: IEEE International Electron Device Meeting, IEDM, 7-9 Dec. 2009, Baltimore, MD, USA (pp. pp. 305-308).

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Abstract:In this paper, it is shown that self-heating causes a gigantic effect on the capacitances of MOSFETs/FinFETs. The effect is used to determine the SOI FinFET thermal impedance and to determine the temperature rise during FinFET operation
Item Type:Conference or Workshop Item
Copyright:© 2009 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/71180
Official URL:http://dx.doi.org/10.1109/IEDM.2009.5424362
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