Characterisation of anisotropic etching in KOH using network etch rate function model: influence of an applied potential in terms of microscopic properties

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Nguyen, Q.D. and Elwenspoek, M. (2006) Characterisation of anisotropic etching in KOH using network etch rate function model: influence of an applied potential in terms of microscopic properties. Journal of Physics: Conference Series, 34 . pp. 1038-1043. ISSN 1742-6596

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Abstract:Using the network etch rate function model, the anisotropic etch rate of p-type single crystal silicon was characterised in terms of microscopic properties including step velocity, step and terrace roughening. The anisotropic etch rate data needed have been obtained using a combination of 2 wagon wheel patterns on different substrate and 1 offset trench pattern. Using this procedure the influence of an applied potential has been investigated in terms of microscopic properties. Model parameter trends show a good correlation with chemical/electrochemical reaction mechanism and mono- and dihydride terminated steps reactivity difference. Results also indicate a minimum in (111) terrace roughening which results in a peak in anisotropic ratio at the non-OCP applied potential of −1250 mV vs OCP.
Item Type:Article
Copyright:© 2006 IOP Publishing
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/71031
Official URL:http://dx.doi.org/10.1088/1742-6596/34/1/172
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